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| TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications * * * * * Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 A (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 A) Low forward voltage: VFM(2) = 0.46 V (typ.) Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 4) Symbol VDSS VDGR VGSS ID IDP EAS IAR EAR Rating -20 -20 8 -2.7 -10.8 1.2 -1.35 0.11 Unit V V V A mJ A mJ Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) JEDEC JEITA TOSHIBA 2-3U1C SBD (Ta = 25C) Characteristics Repetitive peak reverse voltage Average forward current (Note 2a, 6) Peak one cycle surge forward current (non-repetitive) Symbol VRRM IF(AV) IFSM Rating 20 1.0 7(50Hz) Unit V A A Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Absolute Maximum Ratings for MOSFET and SBD (Ta = 25C) Characteristics Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Channel temperature Storage temperature range Single-device operation (Note 3a) Symbol PD (1) PD (2) PD (1) PD (2) Tch Tstg Rating 1.35 1.12 W 0.53 0.33 150 -55~150 C C Unit 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 TPCF8B01 Thermal Characteristics for MOSFET and SBD Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Marking (Note 7) Lot code (month) Lot No. (weekly code) Part No. (or abbreviation code) F8A Product-specific code Lot code (year) Note 8 Pin #1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) he power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD =-16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -1.35 A Note 5: Repetitive rating; Pulse width limited by maximum channel temperature. Note 6: Rectangular waveform ( =180o), VR =15V. Note 7: Black round marking "" locates on the left lower side of parts number marking "F8A" indicates terminal No. 1. Note 8 A dot marking identifies the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TPCF8B01 Electrical Characteristics (Ta = 25C) MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -1.4 A VOUT RL = 7.14 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -0.7 A VGS = -2.5 V, ID = -1.4A VGS = -4.5 V, ID = -1.4 A VDS = -10 V, ID = -1.4 A Min -20 -12 -0.5 2.4 Typ. 215 110 72 4.7 470 70 80 5 9 8 26 6 4 2 Max 10 -10 -1.2 300 160 110 ns nC pF S m Unit A A V V VDD -10 V - Duty 1%, tw = 10 s VDD -16 V, VGS = -5 V, - ID = -2.7 A MOSFET Source-Drain Ratings and Characteristics Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -2.7 A, VGS = 0 V Min Typ. Max -10.8 -1.2 Unit A V SBD Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol VFM(1) VFM(2) IRRM Cj Test Condition IFM = 0.7 A IFM = 1.0 A VRRM = 20 V VR = 10 V, f = 1 MHz Min Typ. 0.43 0.46 54 Max 0.49 50 Unit V V A pF 3 2009-09-29 TPCF8B01 MOSFET ID - VDS -5 -4 -4.5 -4 -2.5 -2.8 -3.5 -3 -2 -8 -1.8 -10 -4.5 -5 -2.8 -2.5 -3 -3.5 -6 -4 Common source Ta = 25C Pulse test -2 -1.8 ID - VDS ID (A) Drain current -2 VGS = -1.5 V -1 Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0 Drain current ID (A) -4 -2 -5 -3 VGS = -1.5 V 0 0 0 0 -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -5 Common source VDS = -10 V Pulse test -1.0 VDS - VGS Common source Ta = 25C Pulse test -4 (V) Drain-source voltage VDS Ta = 25C Ta = -55C -0.8 Drain current ID (A) -3 -0.6 -2 -0.4 -1 Ta = 100C -0.2 ID = -2.7 A -1.4 A 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 0 -0.7 A -2 -4 -6 -8 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test 1000 Common source Ta = 25C Pulse test RDS (ON) - ID |Yfs| (S) Drain-source ON resistance RDS (ON) (m) -1.8 V -2.5 V 100 VGS = -4.5 V Forward transfer admittance 10 Ta = 25C Ta = -55C Ta = 100C 1 -0.1 -1 -10 10 -0.1 -1 -10 Drain current ID (A) Drain current ID (A) 4 2009-09-29 TPCF8B01 RDS (ON) - Ta 300 Common source Pulse test -100 ID = -1.4 A -0.7 A VGS = -1.8 V 200 ID = -1.4 A 150 ID = -2.7 A -0.7 A Common source Ta = 25C Pulse test IDR - VDS Drain reverse current IDR (A) 250 Drain-source ON resistance RDS (ON) (m) -10 -2.5 -4.5 100 -2.5 V ID = -0.7, -1.4, -2.7 A -1.8 -1 VGS = 0 V 50 -4.5 V 0 -80 -40 0 40 80 120 160 -1 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25C -2.0 Common source VDS = -10 V ID = -200 A Pulse test Vth - Ta Vth (V) Ciss -1.5 (pF) Gate threshold voltage 1000 Capacitance C -1.0 100 Coss Crss -0.5 -0.0 -80 10 -0.1 -1 -10 -100 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2 t=5s Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Dynamic input/output characteristics -20 -10 Drain power dissipation PD (W) (V) 1.6 (1) 1.2 (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 5S -16 -4 V VDS -12 VGS -8 Drain-source voltage 0.8 (3) 0.4 (4) -8 Common source ID = -2.7 A Ta = 25C Pulse test -4 -4 -2 0 0 40 80 120 160 0 0 -2 -4 -6 -8 0 -10 Ambient Temperature Ta (C) Total gate charge Qg (nC) 5 2009-09-29 Gate-source voltage VDD = -16 V -6 VGS (V) -8 V VDS TPCF8B01 rth - tw 1000 Single pulse (4) (3) (2) Transient thermal impedance rth (C/W) 100 (1) 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area 100 (A) ID max (pulse)* 10 1 ms* 10 ms* Drain current ID 1 Single pulse Ta=25 Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 6 2009-09-29 TPCF8B01 SBD iF - vF 10 0.8 PF (AV) - IF (AV) iF (A) Average forward power dissipation PF (AV) (W) 0.7 Tj=150 1 DC 0.6 Instantaneous forward current 180 0.5 0.4 0.3 0.2 0.1 0.0 0 360 125 75 25 0.1 120 =60 Rectangular waveform Conduction angle: 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous forward voltage vF (V) Average forward current IF (AV) (A) Ta max - IF (AV) Device mounted on a glass-epoxy board(a) (Note 2a) rth- tw 100 (4) (3) (2) (1) 160 Maximum allowable lead temperature Ta max (C) Rectangular waveform Single-device operation (Note 3a) 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 360 I Conduction angle: Transient thermal impedance rth (C/W) IF(AV) V R =15V 100 Device mounted on a glass-epoxy board(a)(Note 2a) =60 120 180 DC 10 (1)Single-device operation(Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) 1.6 1 1m 10 m 100 1 10 100 1000 Average forward current IF (AV) (A) Pulse width tw (s) Surge forward current (non-repetitive) 10 9 Ta=25 f=50Hz 1000 Cj - VR (typ.) f=1MHz Ta=25 Peak surge forward current IFSM (A) 8 7 6 5 4 3 2 1 0 1 10 100 Junction capacitance Cj (pF) 100 10 1 10 100 Number of cycles Reverse voltage VR (V) 7 2009-09-29 TPCF8B01 IR - Tj 10 Pulse test (typ.) 0.06 Rectangular waveform 0 360 PR (AV) - VR (typ.) Average reverse power dissipation PR (AV) (W) (mA) 0.05 VR DC 300 240 180 120 60 1 IR 0.04 0.1 Conduction angle: Tj=125 Reverse current 0.03 VR=20V 0.01 5V 0.001 10V 0.02 0.01 0.0001 0 20 40 60 80 100 120 140 160 0.00 0 5 10 15 20 Junction temperature Tj (C) Reverse voltage VR (V) 8 2009-09-29 TPCF8B01 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2009-09-29 |
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